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HS Code 38180010 - doped silicon wafers discs
Silicon doped for use in electronics, in the form of discs, wafers, cylinders, rods or similar forms, whether or not polished or with a uniform epitaxial coating (excl. elements that have been further processed, e.g. by selective diffusion)
Examples (No official information or warranty)
- Phosphorus-doped silicon wafers (n-type, 300mm diameter)
- Boron-doped silicon ingots (p-type, orientation)
- Arsenic-doped silicon epi wafers (uniform epitaxial coating)
- Antimony-doped silicon discs (polished surface)
- Gallium-doped silicon cylinders (for crystal pulling)
- Aluminum-doped silicon rods (substrate grade)
- Boron-doped silicon ingots (p-type, orientation)
- Arsenic-doped silicon epi wafers (uniform epitaxial coating)
- Antimony-doped silicon discs (polished surface)
- Gallium-doped silicon cylinders (for crystal pulling)
- Aluminum-doped silicon rods (substrate grade)
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Trade restrictions and policies
Chapter 38
22 Trade restrictions and policies
Position 3818
4 Trade restrictions and policies
Subheading 381800
4 Trade restrictions and policies
Customs Tariff Number 38180010
1900-01-01
North Korea (Democratic People’s Republic of Korea) (KP)
Import control on restricted goods and technologies
Regulation 1509/17
1900-01-10
ERGA OMNES (1011)
Import control on REACH
Regulation 1907/06
1900-01-01
ERGA OMNES (1011)
Supplementary unit import
Regulation 0748/13
1900-01-01
ERGA OMNES (1011)
Supplementary unit import
Regulation 0748/13
1900-01-01
North Korea (Democratic People’s Republic of Korea) (KP)
Export control on restricted goods and technologies
Regulation 1509/17
1900-01-15
All third countries (1008)
Export authorization (Dual use)
Regulation 2003/25
1900-01-25
Belarus (BY)
Export control
Regulation 0765/06