HS Code 38180011 - doped silicon wafers photovoltaic

Doped silicon wafers of a thickness <=200μm, rectangular, whether or not with cut or rounded corners "photovoltaic wafers"
warning Can be used for an export declaration.
(Combined Nomenclature, Customs Tariff Number)

Examples (No official information or warranty)

- P-type monocrystalline silicon wafers (boron-doped)
- N-type monocrystalline silicon wafers (phosphorus-doped)
- P-type multicrystalline silicon wafers (gallium-doped)
- N-type PERC silicon wafers (phosphorus-doped)
- Rectangular P-type monocrystalline wafers with rounded corners
- Rectangular N-type Czochralski wafers with cut corners
- P-type quasi-mono (cast mono) silicon wafers

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    381800 Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics Doped silicon 38180011 Wafers of a thickness not exceeding 200 micrometres, rectangular, whether or not with cut or rounded corners (so-called photovoltaic wafers) 38180019 Other

Trade restrictions and policies

Customs duties, Trade restrictions and policies with validity date:
Chapter 38
22 Trade restrictions and policies
Position 3818
4 Trade restrictions and policies
Subheading 381800
4 Trade restrictions and policies
Customs Tariff Number 38180011
1900-01-01
ERGA OMNES (1011)
Import control on REACH
Regulation 1907/06
1900-01-01
North Korea (Democratic People’s Republic of Korea) (KP)
Import control on restricted goods and technologies
Regulation 1509/17
1900-01-01
All third countries (1008)
Export authorization (Dual use)
Regulation 2003/25
1900-01-01
Belarus (BY)
Export control
Regulation 0765/06
1900-01-01
North Korea (Democratic People’s Republic of Korea) (KP)
Export control on restricted goods and technologies
Regulation 1509/17