HS Code 38180019 - doped silicon wafers discs

Silicon doped for use in electronics, in the form of discs, wafers, cylinders, rods or similar forms, whether or not polished or with a uniform epitaxial coating (excl. elements that have been further processed, e.g. by selective diffusion, and "photovoltaic" rectangular wafers of a thickness <=200μm)
warning Can be used for an export declaration.
(Combined Nomenclature, Customs Tariff Number)

Examples (No official information or warranty)

- Boron-doped silicon wafers (150mm, polished)
- Phosphorus-doped silicon ingots (CZ)
- Antimony-doped silicon discs (epitaxial coated)
- Arsenic-doped silicon wafers (200mm, prime grade)
- Gallium-doped silicon test wafers (monitor)
- Boron/Phosphorus co-doped silicon wafers (resistivity specified)

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    381800 Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics Doped silicon 38180011 Wafers of a thickness not exceeding 200 micrometres, rectangular, whether or not with cut or rounded corners (so-called photovoltaic wafers) 38180019 Other

Trade restrictions and policies

Customs duties, Trade restrictions and policies with validity date:
Chapter 38
22 Trade restrictions and policies
Position 3818
4 Trade restrictions and policies
Subheading 381800
4 Trade restrictions and policies
Customs Tariff Number 38180019
1900-01-01
ERGA OMNES (1011)
Import control on REACH
Regulation 1907/06
1900-01-01
North Korea (Democratic People’s Republic of Korea) (KP)
Import control on restricted goods and technologies
Regulation 1509/17
1900-01-01
All third countries (1008)
Export authorization (Dual use)
Regulation 2003/25
1900-01-01
Belarus (BY)
Export control
Regulation 0765/06
1900-01-01
North Korea (Democratic People’s Republic of Korea) (KP)
Export control on restricted goods and technologies
Regulation 1509/17